BD678AG transistor equivalent, silicon pnp power transistor.
*Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector
–Emitter Breakdown Voltage—
: V(BR)CEO = -60V
*DC Current Gain—
: hFE = 750(Min) @ IC= -2 A
*Complement to Type BD677A
*G=Pb-Free Package
APPLICATIONS
*Designed for use as output devices in complementary
.
Image gallery
TAGS
Download (Size : 153.02KB)